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Selected Publications (2023-2009)

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  • E. Grunbaum, Z. Barkay, Yoram Shapira, K. Barnham, D.B. Bushnell, N. Ekins-Daukes, M. Mazzer, and P. Wilshaw

Secondary Electron Emission Contrast of Quantum Wells in GaAs p-i-n Junctions
Microscopy and Microanalysis, 15, 125, 2009

  • M. Gurfinkel, S. Potbhare, H. Xiong, J.S. Suehle, Yoram Shapira, A. Lelis, D. Habersat, N. Goldsman,

Ion implantation and SiC MOSFET performance
J. Appl. Phys., 105, 84511, 2009

  • A. Stopel, M. Leibovitch, Yoram Shapira

Performance Characterization of III-V Power Devices
Microelectronics Engineering, 85, 1872, 2008

  • M. Gurfinkel, J. Horst, J.S. Suehle, J.B. Bernstein, Yoram Shapira, K. Matocha, G. Dunne, R. Beaupre

Time Dependent Dielectric Breakdown of 4H-SiC/SiO2 MOS Capacitors
IEEE – Trans. Devices and Materials Reliability, 8, 635, 2008 , 2008

  • A. Stopel, M. Leibovitch, Yoram Shapira

Non-uniform RF overstress in high power transistors and amplifiers
IEEE – Trans. Electron Devices, 55, 1067, 2008

  • M. Gurfinkel, H.D. Xiong, J. Suehle, J.B. Bernstein, Yoram Shapira, A.J. Lelis, D. Habersat, N. Goldsman

Characterization of transient gate oxide trapping in SiC MOSFETs using fast I-V techniques
IEEE – Trans. Electron Devices, 55, 2004, 2008

  • Y. Zidon, Yoram Shapira, Th. Dittrich

Interactions at tetraphenyl-porphyrin/InP interfaces observed by surface photovoltage spectroscopy
Appl. Surf. Sci., 254, 3255, 2008

  • D. S. Warren, Yoram Shapira, H. Kisch, A. J. McQuillan

Apparent semiconductor type reversal in anatase TiO2 nanocrystalline films
J. Phys. Chem. C, 111, 14286, 2007

 

  • Y. Zidon, Yoram Shapira, Th. Dittrich

"Illumination induced charge separation at tetraphenyl-porphyrin / metal oxide interfaces"

J. Appl. Phys., 102, 53705, 2007

  • M. Gurfinkel, H.D. Xiong, J. Suehle, J.B. Bernstein, Yoram Shapira, A.J. Lelis, D. Habersat, N. Goldsman

"Characterization of transient gate oxide trapping in SiC MOSFETs

IEEE – Trans. Devices and Materials Reliability, 84, 2230, 2007

  • Y. Zidon, Y. Shapira, Th. Dittrich, L. Otero

Light induced charge separation in thin H2TPP layers deposited on Au
Phys. Rev. B, 75, 195327, 2007

  • H. D. Xiong, D. Heh, M. Gurfinkel, Q. Li, Y. Shapira, C. Richter, G. Bersuker, R. Choi, J. S. Suehle

"Characterization of electrically active defects in high-k gate dielectrics by using low frequency noise and charge pumping measurements
Microelectronic Engineering, 84, 2230, 2007

  • D. Deutsch, A. Natan, L. Kronik, Yoram Shapira

Electrostatic properties of adsorbed polar molecules: Opposite behavior of a single molecule and a molecular monolayer
J. Am. Chem. Soc., 129, 2989, 2007

  • Y. Zidon, Yoram Shapira, Th. Dittrich

Modulated Charge Separation at Tetraphenyl-Porphyrin /Au Interfaces
Appl. Phys. Letters, 90, 142103, 2007

  • A. Stopel, A. Khramtsov, S. Solodky, A. Fainbrun, Yoram Shapira

Direct monitoring of parasitic oscillations in high power transistors and amplifiers
IEEE – Electron Device Letters, 28, 357, 2007

  • R. Berechman, Yoram Shapira

“Correlating Gate Sinking and Electrical Performance of Pseudomorphic High Electron Mobility Transistors”
Microelectronics Reliability, 47, 1202, 2007

  • Amir Natan, Yoram Shapira, Leeor Kronik

Computing surface dipoles and potentials of self-assembled monolayers from first principles
Applied Surface Science, 252, 7608, 2006

  • R. Hunger, W. Jaegerman, J. Rappich, A. Merson, K. Pettenkorfer, Y. Shapira

Electronic structure of methoxy-, bromo-, and nitrobenzene grafted onto Si(111)
J. Phys. Chem., B 110, 15432, 2006

  • M. Gurfinkel, Y. Weizman, A. Margulis, Y. Fefer, Yoram Shapira

Study of Leakage-Induced Photon Emission processes in sub-90 nm CMOS Devices
Solid State Electronics, 50, 920, 2006

  • Amir Natan, Yigal Zidon, Yoram Shapira, Leeor Kronik

Cooperative effects and dipole formation at semiconductor and self-assembled-monolayer interfaces
Phys Rev. B, 73, 193310, 2006

  • J. B. Bernstein, M. Gurfinkel, X. Li, Y. Shapira, M. Talmor

Electronic Circuit Reliability Modeling: A Review
Microelectronics Reliability, 46, 1957, 2006

  • J. Rappich, A. Merson, K. Roodenko, T. Dittrich, M. Gensch, K. Hinrichs, Y. Shapira

Atomic Electronic properties of Si surfaces and side reactions during electrochemical grafting of phenyl layers
J. Phys. Chem., B 110, 1332, 2006.

  • Z. Barkay, A. Teller, E. Ganor, Z. Levin, Y. Shapira

Atomic force and scanning electron microscopies of atmospheric particles
Microscopy Res. and Technol., 68, 107, 2005

  • M. Gensch, K. Roodenko, K. Hinrichs, R. Hunger, A.G. Guell, A. Merson, U. Schade, Y. Shapira, Th. Dittrich, J. Rappich, N. Esser

"Molecule-solid interfaces studied with infrared ellipsometry: ultra-thin nitrobenzene films"
J. Vac. Sci. Technol., B223, 1838, 2005.

Copyright (2005) by the American Vacuum Societ

  • Z. Barkay, A. Teller, E. Ganor, Z. Levin, Y. Shapira

"Atomic force and scanning electronc microscopies of atmospheric particles"
Microscopy Research and Technique, 68, 107, 2005.

  • M. Gurfinkel, M. Borenshtein, A. Margulis, S. Sade, Y. Fefer, Y. Weizman, Y. Shapira

"Study of hot-carrier-induced photon emission from 90 nm Si MOSFETs"
Appl. Surf. Sci., 248, 62, 2005.

Copyright (2005) by Elsevier Science

  • J. Yang, K. C. Gordon, A. J. McQuillan, Y. Zidon, Y. Shapira

"Photoexcited carriers in organic light emitting materials and blended films observed by surface photovoltage spectroscopy"
Phys. Rev. B., 71, 155209, 2005.

Copyright (2004) by the American Physics Society

  • S. Solodky, T. Baksht, A. Khramtsov, M. Leibovitch, S. Hava, Y. Shapira

"Surface Photovoltage spectroscopy of metamorphic high electron mobility transistor structures"
J. Vac. Sci. Technol.,B22, 2434, 2004.

Copyright (2004) by the American Vacuum Society

  • A. Merson, Th. Dittrich, Y. Zidon, J. Rappich, Y. Shapira

"Charge transfer from TiO2 into adsorbed benzene diazonium compounds"
Appl. Phys. Letters, 85, 1075, 2004.

Copyright (2004) by the American Institute of Physics

  • Z. Barkay, E. Grunbaum, Y. Shapira, P. Wilshaw, K. Barnham, D.B. Bushnell, N.J. Ekins-Daukes,

M. Mazzer
"High-resolution scanning electron microscopy of dopants in p-i-n junctions with quantum wells"
Inst. Phys. Con. Ser., 179, 143, 2004.

Copyright (2004) by the Institute of Physics, GB

  • L. Kronik, Y. Shapira

"Surface photovoltage of semiconductors"
Encyclopedia of Optics, edited by Robert D. Gruenther, Duncan G. Steel and Leopald Bayvel, Elsevier, Oxford, 5, 36, 2004.

Copyright (2004) by Elsevier Science

  • E.A. Katz, D. Faiman, B. Mishori, Y. Shapira, A. Isakina and M.A. Strzhemechny

"Disorder/order phase transition in C60 thin films studied by surface photovoltage spectroscopy"
J. Appl. Phys., 94, 7173, 2003.

Copyright (2003) by the American Institute of Physics

  • T. Baksht, S. Solodky, M. Leibovitch, G. Bunin, Y. Shapira

"Impact ionization measurements and modeling for power PHEMT "
IEEE - TED, 50, 479, 2003.

Copyright (2002) by IEEE

  • A. Rothschild, Y. Komem, A. Levakov, Y. Shapira, N. Ashkenasy

"Electronic and transport properties of reduced and oxidized nanocrystalline TiO2 films"
Appl. Phys. Letters, 82, 574, 2003.

Copyright (2003) by the American Institute of Physics

  • I. Hallakoun, I. Toledo, J. Kaplun, G. Bunin, M. Leibovitch, Y. Shapira

"Critical dimension improvement of plasma enhanced chemical vapor deposition silicon nitride thin films in GaAs devices"
Mat. Sci. and Eng., 102, 352, 2003.

Copyright (2003) by Elsevier Science

  • A. Rothschild, A. Levakov, Y. Shapira, N. Ashkenasy, Y. Komem

"Surface photovoltage spectroscopy study of reduced and oxidized nanocrystalline TiO2 films"
Surf. Sci., 532-4, 456, 2003.

Copyright (2003) by Elsevier Science

  • J. Yang, K. C. Gordon, Y. Zidon, Y. Shapira.

" Light-emitting devices based on ruthenium (II)(4,7-diphenyl-1,10-phenanthroline)3 : Improvement to device response rate and efficiency by use of tris-(8-hydroxyquinoline) aluminum"
J. Appl. Phys., 94, 6391, 2003.

Copyright (2002) by the American Institute of Physics

  • S. Solodky, A. Khramtsov, T. Baksht, M. Leibovitch, S. Hava, Y. Shapira.

"Surface Photovoltage Spectroscopy of Epitaxial Structures for High Electron Mobility Transistors"
Appl. Phys. Letters, 83, 2465, 2003.

Copyright (2002) by the American Institute of Physics

  • Y. Zidon, J. Yang, Y. Shapira

"Studies of phase segregation in Cd1-xZnxTe using surface photovoltage spectroscopy"
Appl. Phys. Letters,81, 436, 2002.

Copyright (2003) by The American Institute of Physics

  • N. Kinrot, Y. Shapira

"Surface electronic structure of P-InP using temperature-controlled surface photovoltage spectroscopy"
Phys. Rev. B, 65, 245303, 2002.

Copyright (2002) APS

  • Jihua Yang, Y. Zidon, Y. Shapira

"Alloy composition and electronic structure of Cd1-xZnxTe by surface photovoltage spectroscopy"
J. Appl. Phys., 91, 703, 2002.

Copyright (2002) The American Institute of Physics

  • I. Shalish, Y. Shapira.

"A new technology for thermodynamically stable contacts for binary wide band gap semiconductors"
U.S. Patent No. 6,410,460, filed 25.6.2002.

Copyright (2002) by The United States Patent Office

  • I. Shalish, C.E.M. de Oliveira, Y. Shapira, J. Salzman

"Hall photovoltage deep-level spectroscopy of GaN films"
Phys. Rev. B, 64, 205313, 2001.

Copyright (2001) by The American Institute of Physics

  • Jihua Yang, Y. Shapira

"Photoinduced charge carriers at surfaces and interfaces of poly [2-methoxy-5-(2(-ethyl-hexyloxy)-1,4-phenylene vinylene] with Au and GaAs"
Phys. Rev. B, 64, 35325, 2001.

Copyright (2001) The American Institute of Physics

  • I. Shalish, Y. Shapira, L. Burstein, J. Salzman

"Surface states and surface oxide in GaN layers"
J. Appl. Phys., 89, 390, 2001.

Copyright (2001) The American Institute of Physics

  • L. Kronik, Y. Shapira

"Surface photovoltage of semiconductor structures: At the crossroads of physics, chemistry and electrical engineering"
Surface and Interface Analysis, 31, 954, 2001.

Copyright (2001) J. Wiley & Sons Ltd.

  • N. Ashkenasy, M. Leibovitch, Y. Rosenwaks, Y. Shapira

"Characterization of quantum well structures using surface photovoltage spectroscopy"
Mater. Sci. and Eng., B 74, 125, 2000.

Copyright (2000) by Elsevier Science

  • I. Shalish, L. Kronik, G. Segal, Y. Shapira, S. Zamir, B. Meyler, J. Salzman

"Grain boundary controlled transport in GaN layers"
Phys. Rev., B 61, 15573, 2000.

Copyright (2000) by The American Institute of Physics

  • I. Shalish, L. Kronik, G. Segal, Y. Shapira, M. Eizenberg and J. Salzman

"Yellow luminescence and Fermi level pinning in GaN layers "
Appl. Phys. Lett., 77, 987, 2000.

Copyright (2000) by The American Institute of Physics

  • I. Shalish, Y. Shapira

"Stability of Schottky contacts with Ta-Si-N amorphous diffusion barriers and Au overlayers on 6H-SiC "
J. Vac. Sci. Technol., B 18, 2477, 2000.

Copyright (2000) by The American Institute of Physics

  • I. Shalish, Y. Shapira

"Thermal Stability of Re Schottky Contacts to 6H-SiC"
IEEE Electron Device Lett., 21, 581, 2000.

Copyright (2000) by The IEEE

  • S. Solodky, M. Leibovitch, N. Ashkenasy, Y. Rosenwaks, I. Hallakoun, Y. Shapira

"Detailed Characterization Methodology for Pseudomorphic High Electron Mobility Transistor Using Surface Photovoltage Spectroscopy"
J. Appl. Phys., 88, 6775, 2000.

Copyright (2000) by The American Institute of Physics

  • I. Shalish, C.E.M. de Oliveira, Y. Shapira, M. Eizenberg and J. Salzman

"Thermal Stability of Pt Schottky contacts to 4H-SiC "
J. Appl. Phys., 88, 5724, 2000.

Copyright (2000) by The American Institute of Physics

  • I. Shalish, Y. Shapira

"A new technology for thermodynamically stable contacts for binary wide bandgap semiconductors"
U.S. Patent No. 6,410,460, filed 25.6.2002 .

Copyright (2002) by The United States Paten Office

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